Light-Emitting Diode

ABSTRACT

A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to Chinese Patent Application No.201721377414.1 filed on Oct. 24, 2017, and No. 201721379090.5 filed onOct. 24, 2017, the disclosures of which are hereby incorporated byreference in their entirety.

BACKGROUND

A light-emitting diode (“LED” for short) features long service life andlow energy consumption, being widely applied in different fields.Typically III-V compound semiconductors represented by GaN have greatapplication potential in high-luminance light-emitting diode, laser andother photoelectronic devices due to wide band gap, high light emittingefficiency, high drift velocity of saturated electrons and stablechemical properties, having attracted extensive attention.

FIG. 1 shows a structural diagram of an existing light-emitting diode.Light emitting elements of the light-emitting diode include: a substrate100, a buffer layer 200 formed on substrate 100, a n-type semiconductorlayer 300 formed on buffer layer 200, an active layer 400 formed onn-type semiconductor layer 300, an p-type semiconductor layer 500 formedon active layer 400, an transparent conductive membrane 600 formed onp-type semiconductor layer 500 to realize current diffusion, a p-sidebond pad 700 formed on transparent conductive membrane 600, a n-sidebond pad 800 exposed due to etching and formed on n-type semiconductor300, as well as a distributed Bragg reflector (DBR) 900 and a reflectivemetal coating 904 on the transparent conductive membrane 600. Thisstructure may reduce light absorption by the reflective metal coating(904), but has relatively poor performance of current dispersioncompared with the case when electrodes 901, 902 and 903.

SUMMARY

Various embodiments of the present disclosure provide a light-emittingdiode, including: a semiconductor epitaxial structure including a firstsemiconductor layer, a second semiconductor layer disposed over thefirst semiconductor layer, an active layer disposed between the firstand second semiconductor layers; a first electrode electrically coupledto the first semiconductor layer; and a second electrode disposed overand electrically coupled to said second semiconductor layer; wherein:the first electrode includes a plurality of first sub-electrodes; thesecond electrode includes a plurality of second sub-electrodes; and anytwo adjacent first sub-electrodes and/or second sub-electrodes have asame projection distance.

In some embodiments, the first electrode and/or second electrodeinclude(s) six sub-electrodes forming a minimal unit of closely-packedhexagonal structure; the six sub-electrodes are composed of one or moreof the first sub-electrodes, the second sub-electrodes, or a combinationof the first sub-electrodes and the second sub-electrodes.

In some embodiments, the closely-packed hexagonal structure includes onefirst sub-electrode or one second sub-electrode as a center.

In some embodiments, the closely-packed hexagonal structure includes sixfirst sub-electrodes, or six second sub-electrodes, or two firstsub-electrodes and four second sub-electrodes, or four firstsub-electrodes and two second sub-electrodes.

In some embodiments, the closely-packed hexagonal structure includesthree first sub-electrodes and three second sub-electrodes.

In some embodiments, the first sub-electrodes and second sub-electrodesare arranged in a staggered manner.

In some embodiments, the three first sub-electrodes constitute oneminimal unit of equilateral triangle; and the three secondsub-electrodes constitute one minimal unit of equilateral triangle.

In some embodiments, a number of said first sub-electrodes is smallerthan or equal to a number of second sub-electrodes.

In some embodiments, a ratio of the first sub-electrodes to the secondsub-electrodes ranges from 0.3-0.9.

In some embodiments, a distance between two adjacent firstsub-electrodes is 10˜150 μm; and a distance between two adjacent secondsub-electrodes is 10˜150 μm.

The present disclosure also provides a light-emitting diode, comprising:a semiconductor epitaxial structure including a first semiconductorlayer, a second semiconductor layer disposed over the firstsemiconductor layer, an active layer between the first and secondsemiconductor layers; a first electrode electrically coupled to thefirst semiconductor layer and including a plurality of firstsub-electrodes; a second electrode disposed over and electricallycoupled to the second semiconductor layer, and including a plurality ofsecond sub-electrodes; a third electrode coupled to the plurality offirst sub-electrodes and including a plurality of third sub-electrodes;a fourth electrode coupled to the plurality of second sub-electrodes andincluding a plurality of fourth sub-electrodes; wherein any two adjacentfirst sub-electrodes and/or second sub-electrodes have a same projectiondistance

In some embodiments, a ratio between the third sub-electrodes to thefourth sub-electrodes is greater than or equal to 2:1.

In some embodiments, the proportion of the third sub-electrodes to thefourth sub-electrodes is greater than 4:1.

In some embodiments, the third sub-electrodes have straight or curvedstrip pattern.

In some embodiments, the curved strip pattern includes S-shaped patternor Z-shaped pattern.

In some embodiments, the several third sub-electrodes have the sameshape or different shapes.

In some embodiments, adjacent third sub-electrodes have several secondsub-electrodes placed in between.

In some embodiments, the several second sub-electrodes placed in betweenhave the same or similar patterns with neighbouring thirdsub-electrodes.

In some embodiments, the fourth sub-electrodes have hollow pattern.

In some embodiments, a fifth electrode and a sixth electrode are alsoincluded, wherein the fifth electrode is connected to the several thirdsub-electrodes, and the sixth electrode is connected to the severalfourth sub-electrodes.

In some embodiments, the fifth electrode and the sixth electrode havethe same shape and are arranged symmetrically.

Various embodiments of the present disclosure can have one or more ofthe following advantageous effects.

(1) Through even and separate distribution of first sub-electrodes andsecond sub-electrodes in the structure of a light-emitting diode, anytwo adjacent first sub-electrodes and/or second sub-electrodes have thesame projection distance; the first electrodes are separate and notinterconnected; the first conductive type semiconductor layer hasreduced platform etching area to increase the light emitting area; thesecond electrodes are separate and not interconnected, so that theinterface between the light emitting area and the insulating layer (suchas the DBR reflecting layer) is maximized and the luminance is enhanced.

(2) All sub-electrodes are distributed in an even array; any twoadjacent first sub-electrodes and/or second sub-electrodes have the sameprojection distance, enabling the optimal distribution of currentdispersion and reduction of the forward voltage fall (VF).

(3) The fourth sub-electrodes have hollow pattern; the thirdsub-electrodes lie at the hollow parts of the fourth sub-electrodes andhave complementary pattern to the fourth sub-electrodes; through properproportioning of the third sub-electrodes to the fourth sub-electrodes,the uniformity of current injection distribution can be effectivelyregulated, so as to enhance the light emitting uniformity and efficiencyof the light-emitting diode.

The other features and advantages of this present disclosure will bedescribed in detail in the following specification, and it is believedthat such features and advantages will become more obvious in thespecification or through implementations of this invention. The purposesand other advantages of the present disclosure can be realized andobtained in the structures specifically described in the specifications,claims and drawings.

While the invention will be described in conjunction with someembodiments and methods of use, it will be understood by those skilledin the art that such description is not intended to limit the scope ofthe present disclosure, and various alternations, modifications andequivalents may be made therein without departing from the spirit andscope of the invention as defined by the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the embodiments and constitute a part of thisspecification, together with the embodiments, are therefore to beconsidered in all respects as illustrative and not restrictive. Inaddition, the drawings are merely illustrative, which are not drawn toscale.

FIG. 1 is a structural diagram of a known light-emitting diode.

FIG. 2 is a top view of the light-emitting diode according to Embodiment1 of the present disclosure.

FIG. 3 is a sectional diagram along the A-A′ line of FIG. 2.

FIG. 4 is a top view of the light-emitting diode according to Embodiment2.

FIG. 5 is a top view of the light-emitting diode according to Embodiment3.

FIG. 6 is a top view of the light-emitting diode according to Embodiment4.

FIG. 7 is a sectional diagram along the A-A′ line of FIG. 6.

FIG. 8 is a top view of the light-emitting diode according to Embodiment4 (the first electrode and the second electrode are shown, while thethird electrode, the fourth electrode, the fifth electrode and the sixthelectrode are not shown).

FIG. 9 is a sectional diagram along the A-A′ line of FIG. 8.

FIG. 10 is a top view of the light-emitting diode according toEmbodiment 5 of the present disclosure.

FIG. 11 is a top view of the light-emitting diode according toEmbodiment 6 of the present disclosure.

FIG. 12 is a top view of the light-emitting diode according toEmbodiment 7 of the present disclosure.

FIG. 13 is a top view of the light-emitting diode according toEmbodiment 8 of the present disclosure.

In the drawings, 100: Substrate; 200: semiconductor laminate; 201: Firstconductive type semiconductor layer; 202: Active layer; 203: Secondconductive type semiconductor layer; 300: First insulating layer; 400A:First electrode; 400B: Second electrode; 401: First sub-electrode; 402:Second sub-electrode; 500: Second insulating layer; 601: Thirdelectrode; 602: Fourth electrode; 700: Third insulating layer; 801:Fifth electrode; 802: Sixth electrode; 900: Electrode opening.

DETAILED DESCRIPTION

Various embodiments of the present disclosure will be described indetail with reference to the accompanying drawings and examples, to helpunderstand and practice the disclosed embodiments, regarding how tosolve technical problems using technical approaches for achieving thetechnical effects. It should be noted that the embodiments and theircharacteristics described in this disclosure may be combined with eachother and such technical proposals are deemed to be within the scope ofthis disclosure without departing from the spirit of this invention.

Embodiment 1

FIG. 2 and FIG. 3 show a light-emitting diode, comprising substrate 100and semiconductor laminate 200 on substrate 100, further comprising:first conductive type semiconductor layer 201; second conductive typesemiconductor layer 203 disposed on first conductive type semiconductorlayer 201; active layer 202 between first conductive type semiconductorlayer 201 and second conductive type semiconductor layer 203; firstelectrode 400A and second electrode 400B, wherein first electrode 400Abeing electrically connected to first conductive type semiconductorlayer 201, second electrode 400B being disposed on and electricallyconnected to second conductive type semiconductor layer 203, firstelectrode 400A including several first sub-electrodes 401, and secondelectrode 400B including several second sub-electrodes 402; insulatinglayer 300 being disposed beyond the areas of first electrode 400A andsecond electrode 400B on surface of the semiconductor laminate.

Specifically, substrate 100 can be, but without limitation to, any ofthe following: sapphire, aluminum nitride, gallium nitride, silicon andsilicon carbide, having plain or patterned surface. In this embodiment,sapphire is In some embodiments used as substrate 100. The semiconductorlaminate can be made of gallium nitride-based, gallium phosphide-based,gallium-nitrogen-phosphorus-based or zinc oxide-based material. In thisembodiment, gallium nitride-based material is used. The epitaxial layerfrom the bottom to the top is composed of an n-type semiconductor layer,an active layer and a p-type semiconductor layer, wherein: the n-typesemiconductor layer is an N-GaN layer, the active layer is an AlGaN MQWactive layer, and the p-type semiconductor layer is a P-GaN layer. Thestructure of the semiconductor laminate according to this embodiment isnot limited to the N-GaN layer-AlGaN MQW active layer-P-GaN layerstructure, but can be any other epitaxial structure triggering lightemitting. Insulating layer 300 can be made of Mg_(x)N_(y), Si_(x)N_(y),Si_(x)O_(y), Ti_(x)O_(y), Zr_(x)O_(y), Hf_(x)O_(y) or other materials(such as polyimide, Teflon, poly-p-xylylene or other polymers). In thisembodiment, a combination of highly reflective Ti_(x)O_(y) and poorlyreflective Si_(x)O_(y) is used as insulating layer 300. The highly andpoorly reflective materials are alternatively arranged on thedistributed Bragg reflector (DBR) to reflect lights from the activelayer.

With reference to FIG. 2, the first electrode and the second electrodecan be round, or otherwise square, hexagonal or of other regular polygonshape. In this embodiment, round electrodes are In some embodimentsused. Each first sub-electrode or second sub-electrode is evenly andseparately distributed; any two adjacent first sub-electrodes and/orsecond sub-electrodes have the same projection distance, which is theminimum distance between any two first sub-electrodes and/or secondsub-electrodes. The distance between two first sub-electrodes rangesbetween 10˜150 μm and In some embodiments between 50˜150 μm; thedistance between two second sub-electrodes ranges between 10˜150 μm andIn some embodiments between 50˜150 μm. The first electrode and/or thesecond electrode include(s) six first sub-electrodes and/or secondsub-electrodes constituting one minimal unit of close-packed hexagonalstructure, in realization of the most close-packed arrangement ofsub-electrodes. In A Cell, the close-packed hexagonal structure has onefirst sub-electrode as the center and includes three firstsub-electrodes 401 and three second sub-electrodes 402; the firstsub-electrodes and the second sub-electrodes are arranged in a staggeredmanner; the three first sub-electrodes constitute one minimal unit ofequilateral triangle. In B Cell, the close-packed hexagonal structureincludes three first sub-electrodes 401 and three second sub-electrodes402; the first sub-electrodes and the second sub-electrodes are arrangedin a staggered manner; the three first sub-electrodes constitute oneminimal unit of equilateral triangle. In C Cell, the close-packedhexagonal structure has one first sub-electrode as the center andincludes six second sub-electrodes.

It should be noted that since the first electrode and the secondelectrode are mainly used to disperse current and form ohmic contactwith the semiconductor laminate, if the first electrode has better ohmiccontact with the semiconductor laminate than the second electrode, thenfirst sub-electrodes having better ohmic contact with the semiconductorlaminate are In some embodiments selected; the number of firstsub-electrodes is smaller than the number of the second sub-electrodes,and the proportion of the first sub-electrodes to the secondsub-electrodes may range from 0.3˜0.9.

In the structure of the light-emitting diode provided in thisembodiment, the first electrodes and the second electrodes are evenlyand separately distributed; any two adjacent first sub-electrodes and/orsecond sub-electrodes have the same projection distance; the firstelectrodes are separate and not interconnected; the first conductivetype semiconductor layer has reduced platform etching area to enlargethe light emitting area; the second electrodes are separate and notinterconnected, so that the interface between the light emitting areaand the insulating layer (such as the DBR reflecting layer) is maximizedand the luminance is enhanced; all sub-electrodes are distributed in aneven array; any two adjacent first sub-electrodes and/or secondsub-electrodes have the same projection distance, enabling the optimaldistribution of current dispersion and reduction of the forward voltagefall (VF).

Embodiment 2

FIG. 4 shows a structural diagram of a second light-emitting diode. Whatthis embodiment is identical to EMBODIMENT 1 is that the first electrodeand the second electrode in the structure of the light-emitting diodeprovided in this embodiment are composed of six first sub-electrodesand/or second sub-electrodes constituting one minimal unit ofclose-packed hexagonal structure. What this embodiment differs fromEMBODIMENT 1 is that the structure of the light emitting structureprovided in this embodiment includes an equal number of firstsub-electrodes and second sub-electrodes. In D Cell, the close-packedhexagonal structure has one second sub-electrode as the center andincludes four first sub-electrodes and two second sub-electrodes. Thefour first sub-electrodes form a rectangular structure, while the twosecond sub-electrodes are on the same line with the one secondsub-electrode located at the center of the close-packed hexagonalstructure. In E Cell, the close-packed hexagonal structure has one firstsub-electrode as the center and includes two first sub-electrodes andfour second sub-electrodes. The four second sub-electrodes form arectangular structure, while the two first sub-electrodes are on thesame line with the one first sub-electrode located at the center of theclose-packed hexagonal structure.

Embodiment 3

FIG. 5 shows a structural diagram of a third light-emitting diode. Whatthis embodiment is identical to EMBODIMENT 2 is that in that theclose-packed hexagonal structure in the structure of the light-emittingdiode provided in this embodiment includes two first sub-electrodes andfour second sub-electrodes or four first sub-electrodes and two secondsub-electrodes. What this embodiment differs from EMBODIMENT 2 is thatthe structure of the light emitting structure provided in thisembodiment includes fewer first sub-electrodes than secondsub-electrodes; specifically, the proportion of first sub-electrodes tosecond sub-electrodes is 8:9, ranging between 0.3˜0.9. In F Cell, theclose-packed hexagonal structure has one first sub-electrode as thecenter and includes two first sub-electrodes and four secondsub-electrodes. The two first sub-electrodes form an isosceles trianglewith the one first sub-electrode located at the center of theclose-packed hexagonal structure. In G Cell, the close-packed hexagonalstructure has one second sub-electrode as the center and includes fourfirst sub-electrodes and two second sub-electrodes. The two secondsub-electrodes form an isosceles with the one first sub-electrodelocated at the center of the close-packed hexagonal structure.

Embodiment 4

FIG. 6 and FIG. 7 show a light-emitting diode, comprising substrate 100and semiconductor laminate 200 formed on substrate 100, furthercomprising: first conductive type semiconductor layer 201; secondconductive type semiconductor layer 203 on first conductive typesemiconductor layer 201; active layer 202 between first conductive typesemiconductor layer 201 and second conductive type semiconductor layer203; first electrode 400A and second electrode 400B—first electrode 400Abeing electrically connected to first semiconductor 201, secondelectrode 400B disposed on and electrically connected second conductivetype semiconductor layer 203, first electrode 400A includes severalfirst sub-electrodes 401, and second electrode 400B includes severalsecond sub-electrodes 402; first insulating layer 300 disposed beyondthe areas of first electrode 400A and second electrode 400B on surfaceof the semiconductor laminate; third electrode 601 including severalthird sub-electrodes, lying on and wrapping first electrode 400A forconnecting to several first sub-electrodes 401; fourth electrode 602including several fourth electrodes, lying on and wrapping secondelectrode 400B for connecting several second sub-electrodes 402; secondinsulating layer 500, lying on the first insulating layer 300 forelectric insulation of third electrode 601 and fourth electrode 602;third insulating layer 700, lying on the third electrode, the fourthelectrode and the second insulating layer, with the electrode openingexposed; fifth electrode 801 and sixth electrode 802 filling electrodeopenings and lying on partial surface of third insulating layer 700—thefifth electrode being used for connecting to several thirdsub-electrodes and the sixth electrode being used for connecting severalfourth sub-electrodes.

Specifically, substrate 100 can be, but without limitation to, any ofthe following: sapphire, Aluminum nitride, gallium nitride, silicon andsilicon carbide, having plain or patterned surface. In this embodiment,sapphire is In some embodiments used as substrate 100. The semiconductorlaminate can be made of gallium nitride-based, gallium phosphide-based,gallium-nitrogen-phosphorus-based or zinc oxide-based material. In thisembodiment, gallium nitride-based material is used. The epitaxial layerfrom the bottom to the top is composed of an n-type semiconductor layer,an active layer and a p-type semiconductor layer, wherein: the n-typesemiconductor layer is an N-GaN layer, the active layer is an AlGaN MQWactive layer, and the p-type semiconductor layer is a P-GaN layer. Thestructure of the semiconductor laminate according to this embodiment isnot limited to the N-GaN layer-AlGaN MQW active layer-P-GaN layerstructure, but can be any other epitaxial structure triggering lightemitting. First insulating layer 300, second insulating layer 500 andthird insulating layer 700 can be made of Mg_(x)N_(y), Si_(x)N_(y),Si_(x)O_(y), Ti_(x)O_(y), Zr_(x)O_(y), Hf_(x)O_(y) or other materials(such as polyimide, Teflon, poly-p-xylylene or other polymers). In thisembodiment, a combination of highly reflective Ti_(x)O_(y) and poorlyreflective Si_(x)O_(y) is used as insulating layer. The highly andpoorly reflective materials are alternatively arranged on thedistributed Bragg reflector (DBR) to reflect lights from the activelayer.

With reference to FIG. 8 and FIG. 9, the first electrode and the secondelectrode can be round, or otherwise square, hexagonal or of otherregular polygon shape. In this embodiment, round electrodes are In someembodiments used. Each first sub-electrode 401 or second sub-electrode402 is evenly and separately distributed; any two adjacent firstsub-electrodes and/or second sub-electrodes have the same projectiondistance, which is the minimum distance between any two firstsub-electrodes and/or second sub-electrodes. The distance between twofirst sub-electrodes ranges between 10˜150 μm and In some embodimentsbetween 50˜150 μm; the distance between two second sub-electrodes rangesbetween 10˜150 μm and In some embodiments between 50˜150 μm. The firstelectrode and/or the second electrode include(s) six firstsub-electrodes and/or second sub-electrodes constituting one minimalunit of close-packed hexagonal structure, in realization of the mostclose-packed arrangement of sub-electrodes. In A Cell, the close-packedhexagonal structure has one first sub-electrode as the center andincludes three first sub-electrodes 401 and three second sub-electrodes402; the first sub-electrodes and the second sub-electrodes are arrangedin a staggered manner; the three first sub-electrodes constitute oneminimal unit of equilateral triangle. In B Cell, the close-packedhexagonal structure includes three first sub-electrodes 401 and threesecond sub-electrodes 402; the first sub-electrodes and the secondsub-electrodes are arranged in a staggered manner; the three secondsub-electrodes constitute one minimal unit of equilateral triangle. In CCell, the close-packed hexagonal structure has one first sub-electrodeas the center and includes six second sub-electrodes.

With further reference to FIG. 6 and FIG. 7, third electrode 601 iscomposed of eleven third sub-electrodes of the same shape but arrangedin a staggered manner for connection to first sub-electrodes 401A;fourth electrode 602 is composed of four sub-electrodes for connectionto second sub-electrodes 401B; third sub-electrodes can be of straightor curved strip pattern, and straight strip pattern is In someembodiments selected in this embodiment; fourth sub-electrodes havehollow pattern. According to FIG. 3, adjacent third sub-electrodes inthis embodiment have the same spacing; third sub-electrodes are locatedat hollow parts of fourth sub-electrodes and have complementary patternto the fourth sub-electrodes; the proportion of third sub-electrodes tofourth sub-electrodes is 11:1. Through proper proportioning of the thirdsub-electrodes to the fourth sub-electrodes, the uniformity of currentinjection distribution can be effectively regulated, so as to enhancethe light emitting uniformity and efficiency of the light-emittingdiode. Fifth electrode 801 and sixth electrode 802 have the same shapeand are arranged in a symmetrical manner for convenience of eutecticsoldering encapsulation or other process.

It should be noted that since the first electrode and the secondelectrode mainly function to disperse current and form ohmic contactwith the semiconductor laminate, if the first electrode has better ohmiccontact with the semiconductor laminate than the second electrode, thenfirst sub-electrodes having better ohmic contact with the semiconductorlaminate but fewer than second sub-electrodes are In some embodimentsselected; the proportion of the first sub-electrodes to the secondsub-electrodes may range from 0.3˜0.9. The third electrode and thefourth electrode mainly function to realize electrical connection ofsub-electrodes in the N and P electrode areas. The fifth electrode andthe sixth electrode mainly function to set a reflective metal layer,with highly reflective metal such as Al and Ag, between the firstinsulating layer and the second insulating layer, so as to enhance thereflection of light from the active layer and improve the lightextraction efficiency.

To sum up, in the structure of the light-emitting diode provided in thisembodiment, the first electrode and the second electrode are evenly andseparately distributed; any two adjacent first sub-electrodes and/orsecond sub-electrodes have the same projection distance; the firstelectrodes are separate and not interconnected; the first conductivetype semiconductor layer has reduced platform etching area to increasethe light emitting area; the second electrodes are separate and notinterconnected, so that the interface between the light emitting areaand the insulating layer (such as the DBR reflecting layer) is maximizedand the luminance is enhanced; all sub-electrodes are distributed in aneven array; any two adjacent first sub-electrodes and/or secondsub-electrodes have the same projection distance to achieve the optimaldistribution of current dispersion and reduce the forward voltage fall(VF). Through proper proportioning of the third sub-electrodes to thefourth sub-electrodes, the uniformity of current injection distributioncan be effectively regulated, so as to enhance the light emittinguniformity and efficiency of the light-emitting diode.

Embodiment 5

FIG. 10 shows a structural diagram of a fifth light-emitting diode. Whatthis embodiment is identical to EMBODIMENT 4 is that in the structure ofthe light-emitting diode provided in this embodiment, the fourthsub-electrodes also have hollow pattern. What this embodiment differsfrom EMBODIMENT 4 is that in the structure of the light-emitting diodeprovided in this embodiment, third electrode 601 is composed of tenthird sub-electrodes, wherein seven larger third sub-electrodes have thesame shape, the two smaller third sub-electrodes have the same shape,and the one third sub-electrode has the medium size. Additionally,adjacent third sub-electrodes have five to eight second sub-electrodesplaced in between; the five to eight sub-electrodes placed in betweenhave the same or similar pattern with neighboring third sub-electrodes.

Embodiment 6

FIG. 11 shows a structural diagram of a sixth light-emitting diode. Whatthis embodiment is identical to EMBODIMENT 4 is that in the structure ofthe light-emitting diode provided in this embodiment, the fourthsub-electrodes also have hollow pattern. What this embodiment differsfrom EMBODIMENT 4 is that in the structure of the light-emitting diodeprovided in this embodiment, third electrode 601 is composed of eightthird sub-electrodes and has curved strip pattern. The curved strippattern can be S-shaped, Z-shaped or otherwise; the S-shaped pattern ispreferentially selected in this embodiment. Besides, adjacent thirdsub-electrodes have eight second sub-electrodes placed in between; theeight sub-electrodes placed in between have the same pattern withneighboring third sub-electrodes.

Embodiment 7

FIG. 12 shows a structural diagram of a seventh light-emitting diode.What this embodiment is identical to EMBODIMENT 6 is that in thestructure of the light-emitting diode provided in this embodiment, thethird sub-electrodes also have curved strip pattern. What thisembodiment differs from EMBODIMENT 6 in that in the structural of thelight-emitting diode provided in this embodiment, the thirdsub-electrodes have Z-shaped pattern.

Embodiment 8

FIG. 13 shows a structural diagram of an eighth light-emitting diode.This embodiment is different from EMBODIMENT 6 in that in the structureof the light-emitting diode provided in this embodiment, the proportionof third sub-electrodes to fourth sub-electrodes is 2:1; based on thechip size, shape, power and other parameters of a light-emitting diode,the proportion of third sub-electrodes and fourth sub-electrodes can beregulated, for example, to above 4:1 or above 10:1, so as to achievegeneral light emitting uniformity of the light-emitting diode.

Although specific embodiments have been described above in detail, thedescription is merely for purposes of illustration. It should beappreciated, therefore, that many aspects described above are notintended as required or essential elements unless explicitly statedotherwise. Various modifications of, and equivalent acts correspondingto, the disclosed aspects of the exemplary embodiments, in addition tothose described above, can be made by a person of ordinary skill in theart, having the benefit of the present disclosure, without departingfrom the spirit and scope of the disclosure defined in the followingclaims, the scope of which is to be accorded the broadest interpretationso as to encompass such modifications and equivalent structures.

1. A light-emitting diode, comprising: a semiconductor epitaxialstructure including a first semiconductor layer, a second semiconductorlayer disposed over the first semiconductor layer, an active layerdisposed between the first and second semiconductor layers; a firstelectrode electrically coupled to the first semiconductor layer; and asecond electrode disposed over and electrically coupled to said secondsemiconductor layer; wherein: the first electrode includes a pluralityof first sub-electrodes; the second electrode includes a plurality ofsecond sub-electrodes; and any two adjacent first sub-electrodes and/orsecond sub-electrodes have a same projection distance.
 2. Thelight-emitting diode of claim 1, wherein: the first electrode and/orsecond electrode include(s) six sub-electrodes forming a minimal unit ofclosely-packed hexagonal structure; the six sub-electrodes are composedof one or more of the first sub-electrodes, the second sub-electrodes,or a combination of the first sub-electrodes and the secondsub-electrodes.
 3. The light-emitting diode of claim 2, wherein theclosely-packed hexagonal structure includes one first sub-electrode orone second sub-electrode as a center.
 4. The light-emitting diode ofclaim 2, wherein the closely-packed hexagonal structure includes sixfirst sub-electrodes, or six second sub-electrodes, or two firstsub-electrodes and four second sub-electrodes, or four firstsub-electrodes and two second sub-electrodes.
 5. The light-emittingdiode of claim 2, wherein the closely-packed hexagonal structureincludes three first sub-electrodes and three second sub-electrodes. 6.The light-emitting diode of claim 5, wherein the first sub-electrodesand second sub-electrodes are arranged in a staggered manner.
 7. Thelight-emitting diode of claim 6, wherein: the three first sub-electrodesconstitute one minimal unit of equilateral triangle; and the threesecond sub-electrodes constitute one minimal unit of equilateraltriangle.
 8. The light-emitting diode of claim 1, wherein a number ofsaid first sub-electrodes is smaller than or equal to a number of secondsub-electrodes.
 9. The light-emitting diode of claim 1, wherein a ratioof the first sub-electrodes to the second sub-electrodes ranges from0.3-0.9.
 10. The light-emitting diode of claim 1, wherein: a distancebetween two adjacent first sub-electrodes is 10-150 μm; and a distancebetween two adjacent second sub-electrodes is 10-150 μm.
 11. Alight-emitting diode, comprising: a semiconductor epitaxial structureincluding a first semiconductor layer, a second semiconductor layerdisposed over the first semiconductor layer, an active layer between thefirst and second semiconductor layers; a first electrode electricallycoupled to the first semiconductor layer and including a plurality offirst sub-electrodes; a second electrode disposed over and electricallycoupled to the second semiconductor layer, and including a plurality ofsecond sub-electrodes; a third electrode coupled to the plurality offirst sub-electrodes and including a plurality of third sub-electrodes;a fourth electrode coupled to the plurality of second sub-electrodes andincluding a plurality of fourth sub-electrodes; wherein any two adjacentfirst sub-electrodes and/or second sub-electrodes have a same projectiondistance.
 12. The light-emitting diode of claim 11, wherein a ratiobetween the third sub-electrodes to the fourth sub-electrodes is greaterthan or equal to 2:1.
 13. The light-emitting diode of claim 11, whereinthe third sub-electrodes have straight or curved strip pattern.
 14. Thelight-emitting diode of claim 13, wherein the curved strip patternincludes an S-shaped pattern or a Z-shaped pattern.
 15. Thelight-emitting diode of claim 11, wherein the third sub-electrodes havea same or different shapes.
 16. The light-emitting diode of claim 11,wherein adjacent third sub-electrodes have one or more secondsub-electrodes placed therebetween.
 17. The light-emitting diode ofclaim 16, wherein the one or more second sub-electrodes placed betweenhave the same or similar patterns with neighboring third sub-electrodes.18. The light-emitting diode of claim 11, wherein the fourthsub-electrodes have a hollow pattern.
 19. The light-emitting diode ofclaim 11, further comprising a fifth electrode and a sixth electrode,wherein the fifth electrode is coupled to the several thirdsub-electrodes, and the sixth electrode is coupled to the plurality offourth sub-electrodes.
 20. The light-emitting diode of claim 19, whereinthe fifth electrode and sixth electrode have the same shape and arearranged symmetrically.